By Andreas Rosenauer
This ebook presents instruments compatible for the quantitative research of semiconductor electron microscopy. those instruments enable for the exact selection of the composition of ternary semiconductor nanostructures with a spatial solution at close to atomic scales. The e-book specializes in new tools together with pressure kingdom research in addition to review of the composition through the lattice fringe research (CELFA) process. the fundamentals of those strategies in addition to their merits, drawbacks and resources of mistakes are all mentioned. The thoughts are utilized to quantum wells and dots so one can provide perception into kinetic development results akin to segregation and migration. within the first a part of the e-book the basics of transmission electron microscopy are supplied. those are wanted for an knowing of the electronic picture research suggestions defined within the moment a part of the publication. There the reader will locate details on various equipment of composition selection. The 3rd a part of the ebook specializes in purposes resembling composition decision in InGaAs Stranski--Krastanov quantum dots. ultimately it truly is proven how an development within the precision of the composition assessment might be got via combining CELFA with electron holography. this can be validated for an AlAs/GaAs superlattice.
Read or Download Transmission Electron Microscopy of Semiconductor Nanostructures: An Analysis of Composition and Strain State (Springer Tracts in Modern Physics) PDF
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Additional info for Transmission Electron Microscopy of Semiconductor Nanostructures: An Analysis of Composition and Strain State (Springer Tracts in Modern Physics)
7. Color-coded maps of the components of the displacement vector field deduced from Fig. 9). The red regions indicate displacement vectors pointing to the right, whereas the blue regions correspond to a component pointing to the left. 5 Averaged Displacements and Lattice Spacings In some cases it is appropriate to average the local displacements and lattice spacings along the whole length of a grid line or along part of it. As an example, Fig. 0 0 10 20 30 40 50 (002) plane number Fig. 8. Components of the displacement vector field for each ML in the growth direction along the horizontal direction averaged in the AOI of Fig.
1. Parameters of TEMs frequently used in the work described in this book. 8 nm The second type of image distortion is caused by inexact focusing of the objective lens. e. the lower surface of the specimen) and the image plane of a lens of focal length f can be described using the distances from the center of the lens to the object plane dOP and to the image plane dIP by the following relation: 1 1 1 = + . 2) The focal length of the objective lens is adjusted via its current. In the TEM, the distance dIP is fixed and dOP is defined by the position of the specimen; dIP ≫ dOP .
Averaging of the positions of the maxima of the parabolas results in the final position M (3) . 4. Formation of grid lines by connecting positions along each of two selected directions (Figs. 4d,e). 1 Displacements and Lattice Spacings 61 Fig. 3. Three-dimensional plots of the intensities of the Fourier-transformed images of (a) an original image and (b) the image after Wiener noise reduction. The insets show the corresponding lattice images 4 Strain State Analysis Intensity 62 x a 1 2 y c b 3 4 y 3 2 1 2x 3 4 5 d 1,3 1,1 2,2 2,4 1 1 2 e 3 f Fig.