Download Metal-Induced Crystallization: Fundamentals and Applications by Zumin Wang, Lars P. H. Jeurgens, Eric J. Mittemeijer PDF

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By Zumin Wang, Lars P. H. Jeurgens, Eric J. Mittemeijer

This publication presents the 1st entire and in-depth evaluation of the present basic figuring out of metal-induced crystallization and additional elucidates easy methods to hire this technique in a variety of applied sciences, together with in thin-film sunlight cells and exhibit applied sciences. It goals to provide the reader an intensive viewpoint of metal-induced crystallization and thereby stimulate the improvement of novel crystalline-semiconductor-based applied sciences.

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Additional info for Metal-Induced Crystallization: Fundamentals and Applications

Sample text

For a-Si, the critical thickness for nucleation of crystallization at the |{Si} interface is above 2 ML even at 400°C. Therefore, the 2 ML of free Si at the interface stay amorphous and initiation of crystallization cannot occur at this location. At the Al GBs, the critical thickness of {Si} for initiation of crystallization is below 4 ML at temperatures above 140°C. Hence, the only site for c-Si to nucleate at low temperatures is the Al GB, and the crystallization temperature should be higher than 140°C for the c-Al/a-Si layer system.

Jang, J. (2001) Metal-induced crystallization of amorphous silicon. Thin Solid Films, 383, 34–38. 60. Batstone, J. L. (1993) In situ crystallization of amorphous silicon in the transmission electron microscope. Philosophical Magazine A: Physics of Condensed Matter Structure Defects and Mechanical Properties, 67, 51–72. 61. Fan, J. C. , Carl H. Anderson, J. (1981) Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge[sub 1 - x]Si[sub x] alloys determined by scanning calorimetry.

The results are shown in Fig. 11c. Interestingly, the calculation for the c-Al/a-SiGe system predicts a transition from the exclusive Al GB–mediated nucleation of crystallization to (also) the interface-mediated nucleation of crystallization, at a critical temperature of about 320°C (Fig. 11c) [17]. The predicted MIC behaviors are schematically shown in Fig. 11d. , a little above the predicted transition temperature), whereas at a temperature below 300°C a c-SiGe phase of a single composition develops (see the XRD results in Fig.

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