Download Hydrogen in Semiconductors II by Norbert H. Nickel (Eds.) PDF

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By Norbert H. Nickel (Eds.)

Considering that its inception in 1966, the sequence of numbered volumes often called Semiconductors and Semimetals has unusual itself during the cautious collection of recognized authors, editors, and individuals. The "Willardson and Beer" sequence, because it is well known, has succeeded in publishing a variety of landmark volumes and chapters. not just did a lot of those volumes make an effect on the time in their ebook, yet they remain well-cited years after their unique unencumber. lately, Professor Eicke R. Weber of the collage of California at Berkeley joined as a co-editor of the sequence. Professor Weber, a well known specialist within the box of semiconductor fabrics, will additional give a contribution to carrying on with the sequence' culture of publishing well timed, hugely proper, and long-impacting volumes. a number of the fresh volumes, akin to Hydrogen in Semiconductors, Imperfections in III/V fabrics, Epitaxial Microstructures, High-Speed Heterostructure units, Oxygen in Silicon, and others promise that this custom might be maintained or even expanded.Reflecting the really interdisciplinary nature of the sector that the sequence covers, the volumes in Semiconductors and Semimetals were and should stay of serious curiosity to physicists, chemists, fabrics scientists, and equipment engineers in smooth undefined. Key beneficial properties* presents the main in-depth insurance of hydrogen in silicon to be had in one resource* comprises an in depth bankruptcy at the neutralization of defects in III*b1V semiconductors**Combines either experimental and theoretical reviews to shape a accomplished reference

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References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 28 28 29 37 42 45 45 47 48 49 51 51 59 65 69 75 77 I. Introduction Hydrogen is the simplest atom among the elements of the periodic table and, as such, represents the simplest atomic impurity in a crystalline lattice. As a result, there has been a great deal of effort made to understand its role in solids. In particular, its small size, high diffusivity, and extremely high reactivity enable it to interact with other impurities and defects at relatively 25 Copyright 1999 by Academic Press All rights of reproduction in any form reserved.

Hydrogen-Intrinsic Defect Complexes A number of intrinsic defects are created in the silicon lattice on implantation of hydrogen at room temperature. , 1972) and electron (Watkins, 1994) irradiation. However, in a hydrogen-implanted layer, the EPR is dominated by a spectrum with a trigonally symmetric g-tensor; this was denoted initially as the S1 spectrum (Lu¨tgemeier and Schnitzke, 1967). The S1 g-tensor is close to that of B2 (Daly, 1969), which is found after low-dose, low-energy (:100 keV) nitrogen or phosphor ion implantation.

The analysis of emission-rate data to obtain the zero-field activation energy also depends on the choice of model for the field dependence. 2 eV, although the actual value may be slightly smaller than this. The identity of the AA9 and E3 centers was further strengthened by the work of Gorelkinskii and Nevinnyi (1996) on the effects of uniaxial stress on the AA9 center. Their results indicate that H> as well as H occupies BC sites and that the insertion of an H> at a BC site is accompanied by an outward relaxation of the two Si nearest neighbors.

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