Download Current Sense Amplifiers: for Embedded SRAM in by Bernhard Wicht PDF

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By Bernhard Wicht

This ebook offers a scientific and complete perception into present sensing strategies. as well as describing theoretical and functional elements of present sensing, the writer derives useful layout directions for reaching an optimum functionality via a scientific research of other circuit rules. Voltage feel amplifiers also are thought of, due to the fact they're used as a last comparator in a present experience amplifier. leading edge options, similar to reimbursement of the bitline multiplexer and auto-power-down, are elucidated. even if the focal point is on embedded static random entry reminiscence (SRAM), the fabric provided applies to any current-providing reminiscence style, e.g. additionally to rising reminiscence applied sciences reminiscent of MRAM. The publication will entice layout engineers in and in addition to researchers wishing to profit approximately, and observe, present sensing techniques.

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Extra info for Current Sense Amplifiers: for Embedded SRAM in High-Performance System-on-a-Chip Designs

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10. Frequency response of Type B Fig. 11. , the gate capacitance of MIN and the input capacitance ofthe subsequent stage. 14) the current transfer function G (8) becomes gm ((Ao+1)wo+8) C G(8) = _ 82 + 8 {Wo + rinb BL BL + J;L} + {rinwC BL (1 + (Ao + l)gm r in)} . 15) The corresponding frequency response is plotted in Fig. 10. An overshot in the gain diagram can be observed. 18) Wr The approximation is valid for (Ao + l)gm » l/rin which is true for most designs . 15) is a transfer function with a zero and two poles.

75VDD gives good results in any case. Even if samples give a correct decision the sensing delay shows a certain deviation. The standard deviation L\tVSA = o-(tVSA) is plotted in Fig. 15 versus VI N DC. These curves are roughly correlated to the delay tv SA (see Fig. 14 (center)). It is desired that L\tVSA is small with respect to tVSA' Therefore, the ratio L\ttv SA is an important performance measure. As for the VSA delay tVSA itself a local minimum at a certain value of VI N DC can be derived.

A diode-connected n-channel transistor as in Fig. 3c is more appropriate and results in the same performance as the circuit of Fig. 3a. An output voltage can be generated by means of a current mirror. With focus on SRAM this technique has been reported in [49]. Improvements of the output stage are investigated in [81] and [82]. 3a. 3c. If the drain-source resistance of the common-gate transistor MIN is large enough to be neglected, small-signal analysis yields for the input impedance ZEds) and for the current transfer function G(s) Fig.

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