By Francis Balestra
This e-book bargains a complete evaluation of the state of the art in leading edge Beyond-CMOS nanodevices for constructing novel functionalities, common sense and thoughts devoted to researchers, engineers and scholars. The booklet will rather concentrate on the curiosity of nanostructures and nanodevices (nanowires, small slope switches, second layers, nanostructured fabrics, etc.) for complex greater than Moore (RF-nanosensors-energy harvesters, on-chip digital cooling, etc.) and Beyond-CMOS good judgment and thoughts purposes.
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Extra info for Beyond CMOS Nanodevices 2
An ArF laser with an emission wavelength of 193 nm is used. The thickness of the photoresist is adapted to have a proper aspect ratio at the end of trimming. e. NW feature) etching is carried out using the trimmed resist/BARC as a mask. Obviously, the final line width of NWs is mainly determined by the amount of trimmed resist. The HBr plasma curing process is performed in order to harden the 193 nm ArF resist for a better etching resistance. The BARC opening is done using CF4 chemistry. It is used in order to ensure vertical resist/BARC profile and correct line width roughness.
1 shows different NW patterns. Singlefin and multifin (×50) structures are achieved after etching. If small dimensions (sub-10 nm width) are demonstrated, it is not possible to create dense active features by using only 193 nm lithography because of its optical limitations. Consequently, several approaches have been developed in order to reach ITRS predictions [ITR 12], such as extreme ultraviolet (UV) [SUG 12], block-copolymer [ORI 11], e-beam lithography [SUN 13] and spacer patterning approach [CHO 02, BAR 12b].
Ferroelectric Materials for Microwave Tunable Applications, vol. 11, pp. 5–66, 2003. , IEDM 1988, pp. 402–405. , J. Appl. Phys, pp. 064514-1–10, 2008. S. , “Electron device letters”, IEEE, vol. 29, no. 12, pp. 1398–1401, 2008. , “Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors”, Appl. Phys. , vol. 102, p. 192103, 2013. , Internat. Electron Dev. , Technical Digest, pp. 431–434, 2006. , Proc. Device Res. 73–74, June 2008. , vol. 53, no.